october 2011 FDB8441 n-channel powertrench ? mosfet ?2011 fairchild semiconductor corporation FDB8441 rev.a2 www.fairchildsemi.com 1 FDB8441 n-channel powertrench ? mosfet 40v, 120a, 2.5 m features ? typ r ds(on) = 1.9m at v gs = 10v, i d = 80a ? typ q g(10) = 215nc at v gs = 10v ? low miller charge ? low q rr body diode ? uis capability (single pulse and repetitive pulse) ? rohs compliant applications ? powertrain management ? solenoid and motor drivers ? electronic steering ? integrated starter / alternator ? distributed power architectures and vrms ? primary switch for 12v systems l e a d f r e e m t a e l n t i o m p e n i
FDB8441 n-channel powertrench ? mosfet FDB8441 rev.a2 www.fairchildsemi.com 2 electrical characteristics t j = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics b vdss drain to source breakdown voltage i d = 250 p a, v gs = 0v 40 - - v i dss zero gate voltage drain current v ds = 32v v gs = 0v - - 1 p a t j = 150 c - - 250 i gss gate to source leakage current v gs = 20v - - 100 na on characteristics v gs(th) gate to source threshold voltage v ds = v gs , i d = 250 p a 2 2.8 4 v r on) drain to source on resistance i d = 80a, v gs = 10v - 1.9 2.5 m : i d = 80a, v gs = 10v, t j = 175 c - 3.3 4.3 dynamic characteristics c iss input capacitance v ds = 25v, v gs = 0v, f = 1mhz - 15000 - pf c oss output capacitance - 1250 - pf c rss reverse transfer capacitance - 685 - pf r g gate resistance v gs = 0.5v, f = 1mhz - 1.1 - : q g(tot) total gate charge at 10v v gs = 0 to 10v v dd = 20v i d = 35a i g = 1ma - 215 280 nc q g(th) threshold gate charge v gs = 0 to 2v - 29 38 nc q gs gate to source gate charge - 60 - nc q gs2 gate charge threshold to plateau - 32 - nc q gd gate to drain ?miller? charge - 49 - nc ds( mosfet maximum ratings t c = 25c unless otherwise noted *calculated continuous current based on maximum allowable junction temperature. package limitation current is 120a. thermal characteristics package marking and ordering information symbol parameter ratings units v ds drain to source voltage 40 v v gs gate to source voltage 20 v i d drain current continuous (t c = 25 o c, silicon limited) 262* a drain current continuous (t c = 100 o c, silicon limited) 185* drain current continuous (t c = 25 o c, package limited) 120 drain current continuous (t a = 25 o c, r t ja = 43 o c/w) 28 pulsed see figure 4 e as single pulse avalanche energy (note 1) 947 mj p d power dissipation 300 w derate above 25 o c2 w / o c t j , t stg operating and storage temperature -55 to 175 o c r t jc thermal resistance junction to case 0.5 o c/w r t ja thermal resistance junction to ambient (note 2) 62 o c/w r t ja thermal resistance junction to ambient, 1in 2 copper pad area 43 o c/w device marking device package reel size tape width quantity FDB8441 FDB8441 to-263ab 330mm 24mm 800 units
FDB8441 n-channel powertrench ? mosfet FDB8441 rev.a2 www.fairchildsemi.com 3 electrical characteristics t j = 25c unless otherwise noted switching characteristics drain-source diode characteristics symbol parameter test conditions min typ max units t (on) turn-on time v dd = 20v, i d = 35a v gs = 10v, r gs = 1.5 --77ns t d(on) turn-on delay time - 23 - ns t r turn-on rise time - 24 - ns t d(off) turn-off delay time - 75 - ns t f turn-off fall time - 17.9 - ns t off turn-off time - - 147 ns v sd source to drain diode voltage i sd = 35a - 0.8 1.25 v i sd = 15a - 0.8 1.0 v t rr reverse recovery time i f = 35a, di/dt = 100a/ s - 52 68 ns q rr reverse recovery charge i f = 35a, di/dt = 100a/ s - 76 99 nc notes: 1: starting t j = 25 o c, l = 0.46mh, i as = 64a. 2: pulse width = 100s.
FDB8441 n-channel powertrench ? mosfet FDB8441 rev.a2 www.fairchildsemi.com 4 typical characteristics figure 1. normalized power dissipation vs case temperature 0 25 50 75 100 125 150 175 0.0 0.2 0.4 0.6 0.8 1.0 1.2 power dissipation muliplier t c , case temperature ( o c ) figure 2. 25 50 75 100 125 150 175 0 50 100 150 200 250 300 t c , case temperature ( o c ) i d , drain current (a) v gs = 10v current limited by package maximum continuous drain current vs case temperature figure 3. 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 1e-3 0.01 0.1 1 single pulse d = 0.50 0.20 0.10 0.05 0.02 0.01 normalized thermal impedance, z t jc t, rectangular pulse duration(s) duty cycle - descending order 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z t jc x r t jc + t c p dm t 1 t 2 normalized maximum transient thermal impedance figure 4. peak current capability 10 -5 10 -4 10 -3 10 -2 10 -1 11 0 50 100 1000 10000 transconductance may limit current in this region v gs = 10v single pulse i dm , peak current (a) t, rectangular pulse duration(s) t c = 25 o c i = i 25 175 - t c 150 for temperatures above 25 o c derate peak current as follows:
FDB8441 n-channel powertrench ? mosfet FDB8441 rev.a2 www.fairchildsemi.com 5 figure 5. 11 01 0 0 0.1 1 10 100 1000 limited by package 10us 100us 1ms 10ms i d , drain current (a) v ds , drain to source voltage (v) operation in this area may be limited by r ds (on) single pulse t j = max rated t c = 25 o c dc 4000 forward bias safe operating area 0.01 0.1 1 10 100 1000 1 10 100 500 starting t j = 150 o c starting t j = 25 o c i as , avalanche current (a) t av , time in avalanche (ms) 5000 t av = (l)(i as )/(1.3*rated bv dss - v dd ) if r = 0 if r z 0 t av = (l/r)ln[(i as *r)/(1.3*rated bv dss - v dd ) +1] note: refer to fairchild application notes an7514 and an7515 figure 6. unclamped inductive switching c apability figure 7. 2.02.53.03.54.04.55.0 0 40 80 120 160 t j = -55 o c t j = 25 o c t j = 175 o c pulse duration = 80 p s duty cycle = 0.5% max v dd = 5v i d , drain current (a) v gs , gate to source voltage (v) transfer characteristics figure 8. 01234 0 40 80 120 160 i d , drain current (a) v ds , drain to source voltage (v) pulse duration = 80 p s duty cycle = 0.5% max v gs = 10v v gs = 5v v gs = 4.5v v gs = 3.5v v gs = 4v saturation characteristics figure 9. 345678910 0 10 20 30 40 50 r ds(on) , drain to source on-resistance ( m : ) v gs , gate to source voltage ( v ) t j = 25 o c t j = 175 o c pulse duration = 80 p s duty cycle = 0.5% max drain to source on-res i stance variation vs gate to source voltage figure 10. -80 -40 0 40 80 120 160 200 0.6 0.8 1.0 1.2 1.4 1.6 1.8 t j , junction temperature ( o c ) normalized drain to source on-resistance i d = 80a v gs = 10v pulse duration = 80 p s duty cycle = 0.5% max normalized drain to source on resistance vs junction temperature typical characteristics
FDB8441 n-channel powertrench ? mosfet FDB8441 rev.a2 www.fairchildsemi.com 6 figure 11. -80 -40 0 40 80 120 160 200 0.4 0.6 0.8 1.0 1.2 normalized gate threshold voltage t j , junction temperature ( o c ) v gs = v ds i d = 250 p a normalized gate threshold voltage vs junction temperature figure 12. normalized drain to source br eakdown voltage vs junction temperature -80 -40 0 40 80 120 160 200 0.90 0.95 1.00 1.05 1.10 1.15 t j , junction temperature ( o c ) normalized drain to source breakdown voltage i d = 250 p a figure 13. 0.1 1 10 100 1000 10000 f = 1mhz v gs = 0v c rss c oss c iss capacitance (pf) v ds , drain to source voltage ( v ) 50 40000 capacitance vs drain to source voltage figure 14. 0 50 100 150 200 250 0 2 4 6 8 10 i d = 80a v dd = 20v v dd = 15v v dd = 25v v gs , gate to source voltage(v) q g , gate charge(nc) gate charge vs gate to source voltage typical characteristics
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